{"title":"应变SiGe薄层及相关结构参数对SiGe pmosfet亚阈值特性的影响","authors":"R. Yang, J.S. Luo, J. Tu, R. Zhang","doi":"10.1109/IWJT.2004.1306845","DOIUrl":null,"url":null,"abstract":"Sub-threshold characteristics of strained SiGe PMOSFETs and Si PMOSFETs are theoretically analyzed with simplified but effective models, then are simulated and compared by using a two-dimensional simulator. Sub-threshold current and sub-threshold slope varying with vertical structure parameters are also studied. Simulation results are well consistent with the theoretical analysis, and show that the sub-threshold characteristics of strained SiGe PMOSFETs, which are worse than those of Si PMOSFETs, are sensitive to vertical structure parameters and worth carefully paying attention to.","PeriodicalId":342825,"journal":{"name":"The Fourth International Workshop on Junction Technology, 2004. IWJT '04.","volume":"20 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2004-03-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"The influence of strained SiGe thin layer and correlative structure parameters on sub-threshold characteristics of SiGe PMOSFETs\",\"authors\":\"R. Yang, J.S. Luo, J. Tu, R. Zhang\",\"doi\":\"10.1109/IWJT.2004.1306845\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Sub-threshold characteristics of strained SiGe PMOSFETs and Si PMOSFETs are theoretically analyzed with simplified but effective models, then are simulated and compared by using a two-dimensional simulator. Sub-threshold current and sub-threshold slope varying with vertical structure parameters are also studied. Simulation results are well consistent with the theoretical analysis, and show that the sub-threshold characteristics of strained SiGe PMOSFETs, which are worse than those of Si PMOSFETs, are sensitive to vertical structure parameters and worth carefully paying attention to.\",\"PeriodicalId\":342825,\"journal\":{\"name\":\"The Fourth International Workshop on Junction Technology, 2004. IWJT '04.\",\"volume\":\"20 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2004-03-15\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"The Fourth International Workshop on Junction Technology, 2004. IWJT '04.\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IWJT.2004.1306845\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"The Fourth International Workshop on Junction Technology, 2004. IWJT '04.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IWJT.2004.1306845","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
The influence of strained SiGe thin layer and correlative structure parameters on sub-threshold characteristics of SiGe PMOSFETs
Sub-threshold characteristics of strained SiGe PMOSFETs and Si PMOSFETs are theoretically analyzed with simplified but effective models, then are simulated and compared by using a two-dimensional simulator. Sub-threshold current and sub-threshold slope varying with vertical structure parameters are also studied. Simulation results are well consistent with the theoretical analysis, and show that the sub-threshold characteristics of strained SiGe PMOSFETs, which are worse than those of Si PMOSFETs, are sensitive to vertical structure parameters and worth carefully paying attention to.
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