一个76 x 77mm/sup /， 1685万像素CMOS APS图像传感器

2006 Symposium on VLSI Circuits, 2006. Digest of Technical Papers. Pub Date : 2006-06-15 DOI:10.1109/VLSIC.2006.1705291

S. Ay, E. Fossum

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引用次数: 11

摘要

设计、制造了一种1685万像素(4,096乘以4,114)、单芯片(76mm乘以77mm)、1.35Me像素深的CMOS有源像素传感器(APS)图像传感器，并在0.5mum CMOS工艺下进行了测试。提出了一种混合光电二极管-光电门(HPDPG) APS像元技术。像素间距是18mum。该图像传感器是世界上最大的单芯片CMOS图像传感器，在6英寸硅片上制造

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A 76 x 77mm/sup 2/, 16.85 Million Pixel CMOS APS Image Sensor

A 16.85 million pixel (4,096 times 4,114), single die (76mm times 77mm) CMOS active pixel sensor (APS) image sensor with 1.35Me- pixel well-depth was designed, fabricated, and tested in a 0.5mum CMOS process with a stitching option. A hybrid photodiode-photogate (HPDPG) APS pixel technology was developed. Pixel pitch was 18mum. The developed image sensor was the world's largest single-die CMOS image sensor fabricated on a 6-inch silicon wafer

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来源期刊

2006 Symposium on VLSI Circuits, 2006. Digest of Technical Papers.

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