嵌入硅纳米晶的氮化硅非易失性存储结构

2008 International Conference on Advanced Semiconductor Devices and Microsystems Pub Date : 2008-10-01 DOI:10.1109/ASDAM.2008.4743359

P. Basa, Z. Horváth, T. Jászi, A. Pap, G. Molnár, A. Kovalev, D. Wainstein, P. Turmezei

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引用次数: 0

摘要

采用低压化学气相沉积的方法，采用Si3N4控制层和SiO2或Si3N4隧道层制备了嵌入分离硅纳米晶片的记忆结构。结果表明，适当位置的硅纳米晶层可以改善MNOS结构的充电性能。当充电脉冲为+ mn15 V, 10ms时，存储器窗宽约为6.6 V，保留时间为41年。

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Si3N4 based non-volatile memory structures with embedded Si nanocrystals

Memory structures with an embedded sheet of separated Si nanocrystals were prepared by low pressure chemical vapour deposition using a Si₃N₄ control layer and SiO₂ or Si₃N₄ tunnel layers. It was obtained that a properly located layer of Si nanocrystals improves the charging behaviour of the MNOS structures. Memory window width of about 6.6 V and retention time of 41 years has been achieved for charging pulses of plusmn15 V, 10 ms.

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2008 International Conference on Advanced Semiconductor Devices and Microsystems

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