{"title":"硅谐振腔增强型紫外火焰探测器","authors":"Z. Djuric, K. Radulović, N. Trbojevic, A. Lazic","doi":"10.1109/MIEL.2002.1003184","DOIUrl":null,"url":null,"abstract":"The need for selectively sensitive UV photodetectors poses a requirement both for novel detector structures and for new materials and technologies to produce them. In this paper we consider, for the first time, a possibility to use resonant cavity enhanced detector structures with a silicon absorption layer to increase selectivity and speed of UV detectors. A special emphasis is given to the UV photodetectors used in flame detection.","PeriodicalId":221518,"journal":{"name":"2002 23rd International Conference on Microelectronics. Proceedings (Cat. No.02TH8595)","volume":"33 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2002-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"7","resultStr":"{\"title\":\"Silicon resonant cavity enhanced UV flame detector\",\"authors\":\"Z. Djuric, K. Radulović, N. Trbojevic, A. Lazic\",\"doi\":\"10.1109/MIEL.2002.1003184\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The need for selectively sensitive UV photodetectors poses a requirement both for novel detector structures and for new materials and technologies to produce them. In this paper we consider, for the first time, a possibility to use resonant cavity enhanced detector structures with a silicon absorption layer to increase selectivity and speed of UV detectors. A special emphasis is given to the UV photodetectors used in flame detection.\",\"PeriodicalId\":221518,\"journal\":{\"name\":\"2002 23rd International Conference on Microelectronics. Proceedings (Cat. No.02TH8595)\",\"volume\":\"33 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2002-08-07\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"7\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2002 23rd International Conference on Microelectronics. Proceedings (Cat. No.02TH8595)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/MIEL.2002.1003184\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2002 23rd International Conference on Microelectronics. Proceedings (Cat. No.02TH8595)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MIEL.2002.1003184","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
The need for selectively sensitive UV photodetectors poses a requirement both for novel detector structures and for new materials and technologies to produce them. In this paper we consider, for the first time, a possibility to use resonant cavity enhanced detector structures with a silicon absorption layer to increase selectivity and speed of UV detectors. A special emphasis is given to the UV photodetectors used in flame detection.