{"title":"扫描氮空位磁强计:一种用于器件失效分析的量子技术","authors":"P. Rickhaus, P. Maletinsky","doi":"10.31399/asm.edfa.2022-1.p029","DOIUrl":null,"url":null,"abstract":"\n This article describes the basic measurement physics of scanning nitrogen vacancy (NV) microscopy and the various ways it can be used in semiconductor device failure analysis. Scanning NV microscopy can measure topography as well as magnetic fields, local current density, ac noise, and local temperature variations.","PeriodicalId":431761,"journal":{"name":"EDFA Technical Articles","volume":"27 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2022-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Scanning Nitrogen Vacancy Magnetometry: A Quantum Technology for Device Failure Analysis\",\"authors\":\"P. Rickhaus, P. Maletinsky\",\"doi\":\"10.31399/asm.edfa.2022-1.p029\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"\\n This article describes the basic measurement physics of scanning nitrogen vacancy (NV) microscopy and the various ways it can be used in semiconductor device failure analysis. Scanning NV microscopy can measure topography as well as magnetic fields, local current density, ac noise, and local temperature variations.\",\"PeriodicalId\":431761,\"journal\":{\"name\":\"EDFA Technical Articles\",\"volume\":\"27 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2022-02-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"EDFA Technical Articles\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.31399/asm.edfa.2022-1.p029\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"EDFA Technical Articles","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.31399/asm.edfa.2022-1.p029","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Scanning Nitrogen Vacancy Magnetometry: A Quantum Technology for Device Failure Analysis
This article describes the basic measurement physics of scanning nitrogen vacancy (NV) microscopy and the various ways it can be used in semiconductor device failure analysis. Scanning NV microscopy can measure topography as well as magnetic fields, local current density, ac noise, and local temperature variations.
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