{"title":"高分辨率锁存比较器实现在22纳米FD-SOI工艺","authors":"Z. Jaworski","doi":"10.23919/MIXDES.2018.8436803","DOIUrl":null,"url":null,"abstract":"This paper presents the design of comparator dedicated for high linearity flash ADC, implemented in 22 nm FD-SOI process with 0.8 V supply. The block employs latched dynamic comparator preceded by two-stage preamplifier. The main obstacle to obtain high resolution comparator is transistors' mismatch resulting in relatively high offset voltage of the amplifier. Thus, compensation technique based on trimming of transistor's threshold voltage by means of modulating of back-gate polarization has been employed. The obtained comparator presents resolution of $\\pmb{\\pm 3\\ \\mathrm{mV}}$.","PeriodicalId":349007,"journal":{"name":"2018 25th International Conference \"Mixed Design of Integrated Circuits and System\" (MIXDES)","volume":"7 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"High Resolution Latched Comparator Implemented in 22 nm FD-SOI Process\",\"authors\":\"Z. Jaworski\",\"doi\":\"10.23919/MIXDES.2018.8436803\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper presents the design of comparator dedicated for high linearity flash ADC, implemented in 22 nm FD-SOI process with 0.8 V supply. The block employs latched dynamic comparator preceded by two-stage preamplifier. The main obstacle to obtain high resolution comparator is transistors' mismatch resulting in relatively high offset voltage of the amplifier. Thus, compensation technique based on trimming of transistor's threshold voltage by means of modulating of back-gate polarization has been employed. The obtained comparator presents resolution of $\\\\pmb{\\\\pm 3\\\\ \\\\mathrm{mV}}$.\",\"PeriodicalId\":349007,\"journal\":{\"name\":\"2018 25th International Conference \\\"Mixed Design of Integrated Circuits and System\\\" (MIXDES)\",\"volume\":\"7 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2018-06-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2018 25th International Conference \\\"Mixed Design of Integrated Circuits and System\\\" (MIXDES)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.23919/MIXDES.2018.8436803\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 25th International Conference \"Mixed Design of Integrated Circuits and System\" (MIXDES)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.23919/MIXDES.2018.8436803","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
High Resolution Latched Comparator Implemented in 22 nm FD-SOI Process
This paper presents the design of comparator dedicated for high linearity flash ADC, implemented in 22 nm FD-SOI process with 0.8 V supply. The block employs latched dynamic comparator preceded by two-stage preamplifier. The main obstacle to obtain high resolution comparator is transistors' mismatch resulting in relatively high offset voltage of the amplifier. Thus, compensation technique based on trimming of transistor's threshold voltage by means of modulating of back-gate polarization has been employed. The obtained comparator presents resolution of $\pmb{\pm 3\ \mathrm{mV}}$.