高分辨率锁存比较器实现在22纳米FD-SOI工艺

Z. Jaworski
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引用次数: 1

摘要

本文提出了一种高线性度闪存ADC专用比较器的设计,该比较器采用0.8 V电源、22 nm FD-SOI工艺实现。该模块采用锁存式动态比较器,前置两级前置放大器。实现高分辨率比较器的主要障碍是晶体管失配导致放大器偏置电压过高。因此,采用了通过调制后门极化对晶体管阈值电压进行微调的补偿技术。得到的比较器分辨率为$\pmb{\pm 3\ \ mathm {mV}}$。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
High Resolution Latched Comparator Implemented in 22 nm FD-SOI Process
This paper presents the design of comparator dedicated for high linearity flash ADC, implemented in 22 nm FD-SOI process with 0.8 V supply. The block employs latched dynamic comparator preceded by two-stage preamplifier. The main obstacle to obtain high resolution comparator is transistors' mismatch resulting in relatively high offset voltage of the amplifier. Thus, compensation technique based on trimming of transistor's threshold voltage by means of modulating of back-gate polarization has been employed. The obtained comparator presents resolution of $\pmb{\pm 3\ \mathrm{mV}}$.
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