高电流密度下pnpn结构的增益积及其对iv特性的影响

2016 38th Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD) Pub Date : 2016-09-01 DOI:10.1109/EOSESD.2016.7592556

V. Vendt, J. Willemen, K. Reiser, D. Schmitt-Landsiedel

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摘要

在高电流密度下，由于内部bjt的增益积不足，pnpn结构的导通态箝位电压突然增加。这可以用双极理论和大电流效应来描述。高电流IV特性证实增益乘积减小，并从两个终端pnpn结构中提取临界电流密度。

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Gain-product in pnpn-structures at high current densities and the impact on the IV-characteristic

Pnpn-structures show a sudden increase in on-state clamping voltage due to insufficient gain product of their internal BJTs at high current densities. This can be described with bipolar theory and high-current effects. High-current IV characteristics confirm a gain product decrease and critical current densities are extracted from two terminal pnpn-structures.

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2016 38th Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD)

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