{"title":"采用非预充电复用器和降低预充电电压技术的0.4 /spl mu/m 1.4 ns 32b动态加法器","authors":"A. Inoue, Y. Kawabe, Y. Asada, S. Ando","doi":"10.1109/VLSIC.1995.520663","DOIUrl":null,"url":null,"abstract":"This paper describes fast 32-bit dynamic adder using nonprecharge multiplexers and reduced precharge voltage technique. Design adopting novel multiplexers reduces transistor count, resulting in the reduction of total parasitic capacitance. Reduced precharge voltage makes the discharge time shorter. Experimental circuit has been fabricated using 0.4 /spl mu/m CMOS technology and we confirmed the delay of 1.4 ns at the supply voltage of 3.3 V at room temperature.","PeriodicalId":256846,"journal":{"name":"Digest of Technical Papers., Symposium on VLSI Circuits.","volume":"25 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1995-06-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"9","resultStr":"{\"title\":\"A 0.4 /spl mu/m 1.4 ns 32b dynamic adder using non-precharge multiplexers and reduced precharge voltage technique\",\"authors\":\"A. Inoue, Y. Kawabe, Y. Asada, S. Ando\",\"doi\":\"10.1109/VLSIC.1995.520663\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper describes fast 32-bit dynamic adder using nonprecharge multiplexers and reduced precharge voltage technique. Design adopting novel multiplexers reduces transistor count, resulting in the reduction of total parasitic capacitance. Reduced precharge voltage makes the discharge time shorter. Experimental circuit has been fabricated using 0.4 /spl mu/m CMOS technology and we confirmed the delay of 1.4 ns at the supply voltage of 3.3 V at room temperature.\",\"PeriodicalId\":256846,\"journal\":{\"name\":\"Digest of Technical Papers., Symposium on VLSI Circuits.\",\"volume\":\"25 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1995-06-08\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"9\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Digest of Technical Papers., Symposium on VLSI Circuits.\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/VLSIC.1995.520663\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Digest of Technical Papers., Symposium on VLSI Circuits.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/VLSIC.1995.520663","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A 0.4 /spl mu/m 1.4 ns 32b dynamic adder using non-precharge multiplexers and reduced precharge voltage technique
This paper describes fast 32-bit dynamic adder using nonprecharge multiplexers and reduced precharge voltage technique. Design adopting novel multiplexers reduces transistor count, resulting in the reduction of total parasitic capacitance. Reduced precharge voltage makes the discharge time shorter. Experimental circuit has been fabricated using 0.4 /spl mu/m CMOS technology and we confirmed the delay of 1.4 ns at the supply voltage of 3.3 V at room temperature.
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