{"title":"等离子体诱导损伤与负偏置温度不稳定性在65nm块体和薄盒FDSOI工艺中的相关性","authors":"Ryo Kishida, Kazutoshi Kobayashi","doi":"10.1109/S3S.2016.7804371","DOIUrl":null,"url":null,"abstract":"We evaluate Plasma Induced Damage (PID) and Negative Bias Temperature Instability (NBTI) by measuring frequency of Ring Oscillators (ROs). Initial frequency degradation by PID from Antenna Ratio (AR) of 500 to 1k are 2.1% and 1.9% in the bulk and thin-BOX FDSOI, respectively. NBTI is accelerated by PID in less than 500 AR which is the upper limit of the antenna rule. NBTI correlates with PID and also with initial frequency. The correlation coefficient (CC) between NBTI-induced degradations and the initial frequency is 0.68 in FDSOI, while there is few correlation in bulk (CC = 0.24) because random dopant fluctuation is dominant.","PeriodicalId":145660,"journal":{"name":"2016 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S)","volume":"13 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Correlations between plasma induced damage and negative bias temperature instability in 65 nm bulk and thin-BOX FDSOI processes\",\"authors\":\"Ryo Kishida, Kazutoshi Kobayashi\",\"doi\":\"10.1109/S3S.2016.7804371\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We evaluate Plasma Induced Damage (PID) and Negative Bias Temperature Instability (NBTI) by measuring frequency of Ring Oscillators (ROs). Initial frequency degradation by PID from Antenna Ratio (AR) of 500 to 1k are 2.1% and 1.9% in the bulk and thin-BOX FDSOI, respectively. NBTI is accelerated by PID in less than 500 AR which is the upper limit of the antenna rule. NBTI correlates with PID and also with initial frequency. The correlation coefficient (CC) between NBTI-induced degradations and the initial frequency is 0.68 in FDSOI, while there is few correlation in bulk (CC = 0.24) because random dopant fluctuation is dominant.\",\"PeriodicalId\":145660,\"journal\":{\"name\":\"2016 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S)\",\"volume\":\"13 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2016-10-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2016 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/S3S.2016.7804371\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/S3S.2016.7804371","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Correlations between plasma induced damage and negative bias temperature instability in 65 nm bulk and thin-BOX FDSOI processes
We evaluate Plasma Induced Damage (PID) and Negative Bias Temperature Instability (NBTI) by measuring frequency of Ring Oscillators (ROs). Initial frequency degradation by PID from Antenna Ratio (AR) of 500 to 1k are 2.1% and 1.9% in the bulk and thin-BOX FDSOI, respectively. NBTI is accelerated by PID in less than 500 AR which is the upper limit of the antenna rule. NBTI correlates with PID and also with initial frequency. The correlation coefficient (CC) between NBTI-induced degradations and the initial frequency is 0.68 in FDSOI, while there is few correlation in bulk (CC = 0.24) because random dopant fluctuation is dominant.