{"title":"低温分子束外延生长的退火半绝缘砷化镓外延层中电子陷阱的定量分析与零静态偏置电压瞬态电流谱技术","authors":"W. S. Lau, C. H. Goo, T. C. Chong","doi":"10.1109/SIM.1992.752692","DOIUrl":null,"url":null,"abstract":"A new technique, zero quiescent bias voltage transient current spectroscopy (ZBTCS), was proposed and applied to annealed semi-insulating gallium arsenide epitaxial layers grown by molecular beam epitaxy (MBE). With this new technique, the concentration of the dominant electron trap, which has an activation energy of 0.55 eV, in GaAs grown by MBE at 230/spl deg/C and subsequently annealed in arsenic vapour, was found to be about 4 x 10/sup 16/ CM/sup -3/. This trap is believed to be the EL3 electron trap related to oxygen contamination.","PeriodicalId":368607,"journal":{"name":"Proceedings of the 7th Conference on Semi-insulating III-V Materials,","volume":"47 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1992-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Quantitative analysis of electron traps in annealed semi-insulating gallium arsenide epitaxial layers grown by molecular beam epitaxy at low temperature with a novel zero quiescent bias voltage transient current spectroscopy technique\",\"authors\":\"W. S. Lau, C. H. Goo, T. C. Chong\",\"doi\":\"10.1109/SIM.1992.752692\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A new technique, zero quiescent bias voltage transient current spectroscopy (ZBTCS), was proposed and applied to annealed semi-insulating gallium arsenide epitaxial layers grown by molecular beam epitaxy (MBE). With this new technique, the concentration of the dominant electron trap, which has an activation energy of 0.55 eV, in GaAs grown by MBE at 230/spl deg/C and subsequently annealed in arsenic vapour, was found to be about 4 x 10/sup 16/ CM/sup -3/. This trap is believed to be the EL3 electron trap related to oxygen contamination.\",\"PeriodicalId\":368607,\"journal\":{\"name\":\"Proceedings of the 7th Conference on Semi-insulating III-V Materials,\",\"volume\":\"47 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1992-04-21\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of the 7th Conference on Semi-insulating III-V Materials,\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SIM.1992.752692\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the 7th Conference on Semi-insulating III-V Materials,","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SIM.1992.752692","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Quantitative analysis of electron traps in annealed semi-insulating gallium arsenide epitaxial layers grown by molecular beam epitaxy at low temperature with a novel zero quiescent bias voltage transient current spectroscopy technique
A new technique, zero quiescent bias voltage transient current spectroscopy (ZBTCS), was proposed and applied to annealed semi-insulating gallium arsenide epitaxial layers grown by molecular beam epitaxy (MBE). With this new technique, the concentration of the dominant electron trap, which has an activation energy of 0.55 eV, in GaAs grown by MBE at 230/spl deg/C and subsequently annealed in arsenic vapour, was found to be about 4 x 10/sup 16/ CM/sup -3/. This trap is believed to be the EL3 electron trap related to oxygen contamination.
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