980 nm高功率激光二极管结构的大生长后能带调谐

2013 8th International Conference on Electrical and Electronics Engineering (ELECO) Pub Date : 2013-11-01 DOI:10.1109/ELECO.2013.6713883

T. Xiaohong, Qiao Zhongliang, Lim Peng Huei, Bo Bao-xue

{"title":"980 nm高功率激光二极管结构的大生长后能带调谐","authors":"T. Xiaohong, Qiao Zhongliang, Lim Peng Huei, Bo Bao-xue","doi":"10.1109/ELECO.2013.6713883","DOIUrl":null,"url":null,"abstract":"Post-growth energy band gap turning of the 980nm high power semiconductor laser structure through the quantum well intermixing (QWI) has been investigated. The QWI was carried out by depositing a thin film of SiO2 on top surface of the laser structure samples and followed by high temperature annealing. By using the QWI technique, band gap energy of the 980nm quantum well structure has been blue shifted up to >220nm. High quality of the laser diode structure after the QWI has been confirmed by fabricating the high performance semiconductor lasers using the wafer after the QWI.","PeriodicalId":108357,"journal":{"name":"2013 8th International Conference on Electrical and Electronics Engineering (ELECO)","volume":"31 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2013-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Large post-growth energy band-gap tuning of the 980 nm high power laser diode structures\",\"authors\":\"T. Xiaohong, Qiao Zhongliang, Lim Peng Huei, Bo Bao-xue\",\"doi\":\"10.1109/ELECO.2013.6713883\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Post-growth energy band gap turning of the 980nm high power semiconductor laser structure through the quantum well intermixing (QWI) has been investigated. The QWI was carried out by depositing a thin film of SiO2 on top surface of the laser structure samples and followed by high temperature annealing. By using the QWI technique, band gap energy of the 980nm quantum well structure has been blue shifted up to >220nm. High quality of the laser diode structure after the QWI has been confirmed by fabricating the high performance semiconductor lasers using the wafer after the QWI.\",\"PeriodicalId\":108357,\"journal\":{\"name\":\"2013 8th International Conference on Electrical and Electronics Engineering (ELECO)\",\"volume\":\"31 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2013-11-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2013 8th International Conference on Electrical and Electronics Engineering (ELECO)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ELECO.2013.6713883\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2013 8th International Conference on Electrical and Electronics Engineering (ELECO)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ELECO.2013.6713883","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

研究了980nm高功率半导体激光结构通过量子阱混合(QWI)的生长后能带隙翻转。QWI是通过在激光结构样品的上表面沉积一层SiO2薄膜，然后进行高温退火来实现的。通过QWI技术，980nm量子阱结构的带隙能量蓝移至>220nm。利用QWI后的晶圆制造高性能半导体激光器，证实了QWI后激光二极管结构的高质量。

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Large post-growth energy band-gap tuning of the 980 nm high power laser diode structures

Post-growth energy band gap turning of the 980nm high power semiconductor laser structure through the quantum well intermixing (QWI) has been investigated. The QWI was carried out by depositing a thin film of SiO2 on top surface of the laser structure samples and followed by high temperature annealing. By using the QWI technique, band gap energy of the 980nm quantum well structure has been blue shifted up to >220nm. High quality of the laser diode structure after the QWI has been confirmed by fabricating the high performance semiconductor lasers using the wafer after the QWI.

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2013 8th International Conference on Electrical and Electronics Engineering (ELECO)

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