NPN双极技术在30ghz Ft下的辐射容限

1999 Fifth European Conference on Radiation and Its Effects on Components and Systems. RADECS 99 (Cat. No.99TH8471) Pub Date : 1999-09-13 DOI:10.1109/RADECS.1999.858615

O. Flament, S. Synold, J. de Pontcharra, S. Niel

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引用次数: 4

摘要

研究了以0.35 /spl μ l /m设计规则的CMOS制备的准自对准(QSA)单多晶硅发射极双极技术对电离剂量和位移损伤的容限。本文研究了剂量率、高剂量辐照和高温辐照对单极多晶硅双极晶体管电性能的影响。讨论了不同的结果，并与以往的结果进行了比较，以将该技术与其他技术相比较。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Radiation tolerance of NPN bipolar technology with 30 GHz Ft

The tolerance to both ionizing dose and displacement damage of a Quasi-Self Aligned (QSA) single polysilicon emitter bipolar technology fabricated with a 0.35 /spl mu/m design rules CMOS is presented. In this work we explore the effect of dose rate, high dose level irradiation and elevated temperature irradiation on the electrical performance of single polysilicon bipolar transistors. The different results are discussed and comparison with previous are presented to place the technology with respect to others.

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来源期刊

1999 Fifth European Conference on Radiation and Its Effects on Components and Systems. RADECS 99 (Cat. No.99TH8471)

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