ECL存储元件故障行为的建模

S. Menon, Y. Malaiya, A. Jayasumana
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引用次数: 3

摘要

双极发射极耦合逻辑(ECL)器件现在可以以非常高的密度和更低的功耗制造。在存在物理故障的情况下,检查了两种不同的ECL存储元素实现的行为。虽然已经研究了一些CMOS存储元件实现的故障模型,但对ECL存储元件的关注并不多。传统的卡在故障模型称为最小故障模型,假设存储元件的输入(输出)可以卡在1或0。最小故障模型可能无法模拟存储元件在某些物理故障下的行为。提出了提高物理故障覆盖率的增强故障模型。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Modeling of faulty behavior of ECL storage elements
Bipolar emitter coupled logic (ECL) devices can now be fabricated at very high densities and much lower power consumption. Behavior of two different ECL storage element implementations are examined in the presence of physical faults. While fault models for some implementations of CMOS storage elements have been examined, not much attention has been paid to ECL storage elements. The conventional stuck-at fault model termed minimal fault model assumes that an input (output) of a storage element can be stuck-at-1 or 0. The minimal fault model may not model the behavior under certain physical failures in a storage element. The enhanced fault model providing higher coverage of physical failures is presented.<>
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