cmos集成倒装芯片，微像素InGaN LED阵列，用于片上微荧光测定

LEOS 2007 - IEEE Lasers and Electro-Optics Society Annual Meeting Conference Proceedings Pub Date : 2007-11-12 DOI:10.1109/LEOS.2007.4382543

C. Griffin, J. McKendry, H.X. Zhang, E. Gu, B. Rae, R. Henderson, D. Renshaw, J. Girkin, M. Dawson

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引用次数: 5

摘要

4times16微像素InGaN led阵列，每个直径为72微米，被倒装到CMOS驱动背板上，该背板还包含单光子雪崩光电二极管。模式可编程控制演示在连续和纳秒模式。这种装置有望成为微荧光学研究的小型化激发和检测系统。

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CMOS-integrated flip-chip, micro-pixel InGaN LED arrays for on-chip microfluorimetry

4times16 arrays of micro-pixellated InGaN LEDs, each of diameter 72 mum, have been flip-chipped onto CMOS driver backplanes which also contain single-photon avalanche photodiodes. Pattern-programmable control is demonstrated in continuous and nanosecond modes. Such devices show promise as miniaturized excitation and detection systems for microfluorimetry studies.

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LEOS 2007 - IEEE Lasers and Electro-Optics Society Annual Meeting Conference Proceedings

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