0.5 /spl mu/m BiCMOS工艺流程的原位栅氧化物/电极沉积

IEEE/SEMI 1998 IEEE/SEMI Advanced Semiconductor Manufacturing Conference and Workshop (Cat. No.98CH36168) Pub Date : 1998-09-23 DOI:10.1109/ASMC.1998.731549

T. A. Carbone, G. Solomon

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引用次数: 1

摘要

讨论了一种在单腔内沉积栅极氧化物和电极的方法。原位栅极沉积(DIGE)相对于传统的两步氧化和多晶硅沉积的优点在于循环时间和栅极氧化物完整性的提高。给出了TEM图像及其与计量测量的相关性。

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In-situ gate oxide/electrode deposition for a 0.5 /spl mu/m BiCMOS process flow

A method of depositing the gate oxide and electrode in a single chamber for BiCMOS processing is discussed. The advantages of the deposition of in situ gate electrode (DIGE) over the conventional two step oxidation and polycrystalline silicon deposition is related to cycle time and increased gate oxide integrity. TEM images and a correlation to metrology measurements are presented.

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来源期刊

IEEE/SEMI 1998 IEEE/SEMI Advanced Semiconductor Manufacturing Conference and Workshop (Cat. No.98CH36168)

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