重新配置的多晶片上(mCoW)铜/氧化物混合键合技术,采用嵌入式氧化物、薄胶粘合剂和薄金属覆盖层,实现超高密度3D集成

K. Lee, C. Nagai, A. Nakamura, Hiroki Aizawa, J. Bea, M. Koyanagi, H. Hashiguchi, T. Fukushima, Tanaka Tanaka
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引用次数: 5

摘要

针对超高密度2.5D/3D集成应用,提出了高良率重构多片单片(mCoW) Cu/氧化物杂化键合技术。新型mCoW混合键合技术采用浅凹槽氧化物结构,化学镀盖层,1um以下的薄胶粘接层,避免了目前标准CoW键合技术存在的问题。采用芯片自组装技术和批量热压缩粘接技术,同时对准7mm × 23mm尺寸的多个TEG模具,精度在1um左右。在TEG芯片中,由直径3μm /间距6 μm的微小Cu电极组成的68.4万个电极菊花链通过重新配置的mCoW混合键合技术完整地连接在一起。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Reconfigured multichip-on-wafer (mCoW) Cu/oxide hybrid bonding technology for ultra-high density 3D integration using recessed oxide, thin glue adhesive, and thin metal capping layers
High yield reconfigured multichip-on-wafer (mCoW) Cu/oxide hybrid bonding technology is proposed for ultra-high density 2.5D/3D integration applications. New mCoW hybrid bonding technology use shallow-recess oxide structure, electro-less plated capping layers, and thin glue adhesive layer below 1um to avoid the issues of current standard CoW bonding technology. Multi numbers of TEG die with 7mm × 23mm size are simultaneously aligned with high accuracy around 1um using chip self-assembly technology and thermal-compression bonded by in batch. In the TEG chip, totally 684,000 electrode daisy chain comprising of 3μm diameter/6um pitch tiny Cu electrodes are well intact joined by new reconfigured mCoW hybrid bonding technology.
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