用Fowler-Nordheim电流测量法测定应力下记忆隧道氧化物中的氧化物电荷重分配

ESSDERC '03. 33rd Conference on European Solid-State Device Research, 2003. Pub Date : 2003-09-16 DOI:10.1109/ESSDERC.2003.1256945

S. Bernardini, P. Masson, M. Houssa, F. Lalande

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引用次数: 1

摘要

在这项工作中，我们提出了一种新的方法来确定空间氧化物固定电荷重分配的记忆隧道氧化物在正电应力后的I-V测量。利用介电层的泊松方程解析度计算了隧道电容器的电子注入电流。这种方法允许我们考虑到由于介电层中被捕获的电荷的存在而引起的隧道势垒变形。

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Determination of oxide charge repartition in memory tunnel oxide under stress from Fowler-Nordheim current measurements

In this work, we present a new approach to determine the spatial oxide fixed charge repartition in memory tunnel oxide from I-V measurements after positive electrical stress. The electron injection current of a tunneling capacitor is computed from the Poisson equation resolution in the dielectric layer. This method allows us to take into account the tunneling barrier deformation due to the presence of charges trapped within the dielectric layer.

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ESSDERC '03. 33rd Conference on European Solid-State Device Research, 2003.

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