紫外发光二极管和激光二极管的材料和器件发展

M. Bergmann, T. Kuhr, K. Haberem, C. Hussell, A. Abare, D. Emerson
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引用次数: 0

摘要

由于半导体紫外光源具有低成本、小尺寸、低功耗和高可靠性的优点,近年来,基于algainn的紫外光发射器成为研究的热点。本文总结了在sub- 390nm范围内优化LED和LD性能的关键因素。讨论了led和ld的寿命结果,以及有关进一步增加这些短波长器件的寿命,提高其效率和推动发射波长更短的问题。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Materials and device developments for ultraviolet LEDs and laser diodes
AlGaInN-based ultraviolet (UV) light emitters have recently become the focus of intense research since semiconductor UV optical sources offer the potential of low cost, small size, low power, and high reliability. In this paper, we summarize critical elements for optimizing LED and LD performance in the sub-390 nm range. Lifetime results on both LEDs and LDs are discussed along with issues concerning further increasing the lifetime of these short wavelength devices, increasing their efficiency, and pushing emission wavelength even shorter.
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