系统上封装中共发射极LNA的损耗封装寄生分析

X. Duo, Lirong Zheng, M. Ismail, H. Tenhunen
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引用次数: 5

摘要

VLSI和封装技术的进步使射频系统能够在单个模块中进行浓缩集成,称为SoC和SoP。为了在射频系统及其子系统的SoC和SoP之间找到更好的解决方案,需要对每种解决方案的性能进行预测和评估。推导了SoP/SoC中电感简并共射极低噪声放大器的噪声系数和增益的解析方程,并将其作为无源和封装寄生的函数。因此,它们使设计人员能够定量地评估每个解决方案的总体性能。分析了损耗封装寄生对LNA的影响。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Analysis of lossy packaging parasitics for common emitter LNA in system-on-package
Advances of VLSI and packaging technologies enable condensed integration of an RF system in a single module, known as SoC and SoP. In order to find a better solution between SoC and SoP for RF systems and their sub-systems, it is needed to predict and estimate the performance of each solution. Analytical equations for noise figure and gain of inductively degenerated common-emitter low-noise amplifiers in SoP/SoC are deduced as functions of passives and packaging parasitics. They hence enable designers to evaluate overall performance of each solution quantitatively. Influence of lossy packaging parasitics on LNA is also analyzed.
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