Hole Mobility Model for 6H-SiC Thermoresistive Sensors Simulation

The modeling of low-field hole mobility in 6H silicon carbide (SiC) was carried out. Fitting coefficients for the temperature-dependent Caughey-Thomas equation and the Arora model were obtained. Experimental mobility data reported in the literature served as the basis for the model development. It was shown that Arora model is much more suitable for modeling of hole mobility in 6H-SiC in a wide range of doping concentrations and temperatures than widely used temperature-dependent Caughey-Thomas model. As far as we know, the fitting coefficients of the Arora model for hole mobility in 6H-SiC has not been reported until now. The developed mobility model was then applied to simulate a number of 6H-SiC material properties, which are critical for the design of thermoresistive sensors. Doping and temperature dependencies of resistivity and temperature coefficient of resistivity were obtained. The presented mobility model can be used in device simulators to design and optimize p-type 6H-SiC high-temperature thermoresistive sensors and other 6H-SiC devices.