{"title":"氧化物约束垂直腔半导体激光器动力学","authors":"V. Lysak, I. Sukhoivanov, P. Ivanov, M. Marciniak","doi":"10.1109/ICTON.2002.1009529","DOIUrl":null,"url":null,"abstract":"In this work we investigate pulse behaviour of oxide confinement vertical cavity surface emitting laser for main and side modes. It's shown that the pulse delay time increases with increasing of structure radius. It allows to uniformity of pulse form for the main and side modes.","PeriodicalId":126085,"journal":{"name":"Proceedings of 2002 4th International Conference on Transparent Optical Networks (IEEE Cat. No.02EX551)","volume":"34 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2002-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Dynamics of oxide confinement vertical cavity semiconductor lasers\",\"authors\":\"V. Lysak, I. Sukhoivanov, P. Ivanov, M. Marciniak\",\"doi\":\"10.1109/ICTON.2002.1009529\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this work we investigate pulse behaviour of oxide confinement vertical cavity surface emitting laser for main and side modes. It's shown that the pulse delay time increases with increasing of structure radius. It allows to uniformity of pulse form for the main and side modes.\",\"PeriodicalId\":126085,\"journal\":{\"name\":\"Proceedings of 2002 4th International Conference on Transparent Optical Networks (IEEE Cat. No.02EX551)\",\"volume\":\"34 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2002-08-07\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of 2002 4th International Conference on Transparent Optical Networks (IEEE Cat. No.02EX551)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICTON.2002.1009529\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of 2002 4th International Conference on Transparent Optical Networks (IEEE Cat. No.02EX551)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICTON.2002.1009529","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Dynamics of oxide confinement vertical cavity semiconductor lasers
In this work we investigate pulse behaviour of oxide confinement vertical cavity surface emitting laser for main and side modes. It's shown that the pulse delay time increases with increasing of structure radius. It allows to uniformity of pulse form for the main and side modes.