Xiangdong Zhang, Chone Saycocie, S. Munro, G. Henderson
{"title":"具有40% PAE的SiGe HBT功率放大器，适用于PCS CDMA应用","authors":"Xiangdong Zhang, Chone Saycocie, S. Munro, G. Henderson","doi":"10.1109/MWSYM.2000.863315","DOIUrl":null,"url":null,"abstract":"This paper presents for the first time a high efficiency SiGe HBT based CDMA power amplifier (PA) for PCS handset applications. Under IS-95 CDMA modulation at 1.88 GHz and 3.4 V bias voltage, the two-stage amplifier exhibits 41% power-added efficiency and 30 dBm linear output power with -46 dBc adjacent-channel-power-ratio (ACPR) and 23 dB gain. The SiGe HBTs used in the amplifier were fabricated in a production qualified 8-inch SiGe BiCMOS production process. This performance demonstrates for the first time that SiGe technology can provide competitive performance for PCS wireless handset PA applications.","PeriodicalId":149404,"journal":{"name":"2000 IEEE MTT-S International Microwave Symposium Digest (Cat. No.00CH37017)","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2000-06-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"24","resultStr":"{\"title\":\"A SiGe HBT power amplifier with 40% PAE for PCS CDMA applications\",\"authors\":\"Xiangdong Zhang, Chone Saycocie, S. Munro, G. Henderson\",\"doi\":\"10.1109/MWSYM.2000.863315\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper presents for the first time a high efficiency SiGe HBT based CDMA power amplifier (PA) for PCS handset applications. Under IS-95 CDMA modulation at 1.88 GHz and 3.4 V bias voltage, the two-stage amplifier exhibits 41% power-added efficiency and 30 dBm linear output power with -46 dBc adjacent-channel-power-ratio (ACPR) and 23 dB gain. The SiGe HBTs used in the amplifier were fabricated in a production qualified 8-inch SiGe BiCMOS production process. This performance demonstrates for the first time that SiGe technology can provide competitive performance for PCS wireless handset PA applications.\",\"PeriodicalId\":149404,\"journal\":{\"name\":\"2000 IEEE MTT-S International Microwave Symposium Digest (Cat. No.00CH37017)\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2000-06-11\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"24\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2000 IEEE MTT-S International Microwave Symposium Digest (Cat. No.00CH37017)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/MWSYM.2000.863315\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2000 IEEE MTT-S International Microwave Symposium Digest (Cat. No.00CH37017)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MWSYM.2000.863315","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A SiGe HBT power amplifier with 40% PAE for PCS CDMA applications
This paper presents for the first time a high efficiency SiGe HBT based CDMA power amplifier (PA) for PCS handset applications. Under IS-95 CDMA modulation at 1.88 GHz and 3.4 V bias voltage, the two-stage amplifier exhibits 41% power-added efficiency and 30 dBm linear output power with -46 dBc adjacent-channel-power-ratio (ACPR) and 23 dB gain. The SiGe HBTs used in the amplifier were fabricated in a production qualified 8-inch SiGe BiCMOS production process. This performance demonstrates for the first time that SiGe technology can provide competitive performance for PCS wireless handset PA applications.
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
