中压STATCOM中基于Si和SiC半导体的模块化多电平变换器的性能比较

2020 IEEE 61th International Scientific Conference on Power and Electrical Engineering of Riga Technical University (RTUCON) Pub Date : 2020-11-05 DOI:10.1109/RTUCON51174.2020.9316572

Yinghui Yang, I. Colak

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引用次数: 1

摘要

在Matlab/Simulink环境下，比较了基于硅(Si)半导体的模块化多电平变换器(MMC)和基于碳化硅(SiC)半导体的模块化多电平变换器(MMC)在22kV-2SMVA静态同步补偿器(STATCOM)中的性能和功耗。比较了两种类型半导体在不同工作点的开关损耗和传导损耗。研究结果表明，与硅基MMC相比，SiC基MMC可以显著降低变换器的功率损耗。

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Performance Comparison of Si and SiC Semiconductor Based Modular Multilevel Converters for Medium Voltage STATCOM

This paper compares the performance and power losses of Silicon (Si) semiconductor based Modular Mutilevel Converter (MMC) and Silicon-Carbide (SiC) semiconductor based MMC in a 22kV-2SMVA Static Synchronous Compensator (STATCOM) application in Matlab/Simulink environment. Semiconductor switching and conduction losses are compared at different operating points for both types of the semiconductors. The study result suggests SiC semiconductor based MMC can reduce the converter power losses significantly compared to Si semiconductor based MMC.

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2020 IEEE 61th International Scientific Conference on Power and Electrical Engineering of Riga Technical University (RTUCON)

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