光电AB类微波功率放大器

C.-J. Huang, R. O’Connell
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引用次数: 1

摘要

最近用于发送/接收(TR)模块的功率放大器已配置为AB类或推挽模式,在x波段(8-12.5 GHz)频率下,理论效率为78.5%,工作效率仅为20%。本文介绍了一种新型功率放大器方案的仿真研究结果,特别是光电(OE) AB类推挽微波功率放大器(MPA)。该放大器利用一对新型的基于本态砷化镓的光导半导体开关(pcss)代替传统的微波晶体管,在x波段实现了较高的电路效率和合理的输出功率
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Optoelectronic Class AB Microwave Power Amplifier
Recent power amplifiers for transmit/receive (TR) modules have been configured in the Class AB or push-pull mode with a theoretical efficiency of 78.5% and an operational efficiency of only 20% at X-band (8-12.5 GHz) frequencies. In this paper, we present results of a simulation study of a new scheme of power amplifier, in particular, an optoelectronic (OE) Class AB push-pull microwave power amplifier (MPA). With this amplifier, high circuit efficiency and reasonable output power can be achieved at X-band by utilizing a pair of novel photoconductive semiconductor switches (PCSSs) based on intrinsic GaAs instead of the traditional microwave transistors
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