电感源退化的RF CMOS修饰级联LNA

Proceedings of the Nineteenth National Radio Science Conference Pub Date : 2002-11-07 DOI:10.1109/NRSC.2002.1022654

Hajiz, Khaled Sharafw, E. El-Diwany, Hudia. El-Hennawyw

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引用次数: 8

摘要

提出了一种采用修正级联码拓扑结构的射频CMOS低噪声放大器(LNA)，以降低电压供应，从而降低功耗。针对0.5 /spl mu/m CMOS MOSIS工艺对电路进行了仿真设计。在1ghz时，LNA噪声系数(NF)为1.62 dB，正向增益为18.6 dB，反向隔离度为-45.5 dB。LNA的功耗为12.5 mW，电源为1v。

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An RF CMOS modified-cascode LNA with inductive source degeneration

An RF CMOS low-noise amplifier (LNA) is proposed using modified-cascode topology to reduce the voltage supply and consequently the power dissipation. The circuit was simulated and designed for 0.5 /spl mu/m CMOS MOSIS process. At 1 GHz, the LNA noise figure (NF) is 1.62 dB, forward gain is 18.6 dB and reverse isolation is -45.5 dB. The LNA consumes 12.5 mW from a 1 V power supply.

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Proceedings of the Nineteenth National Radio Science Conference

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