聚合物扩散剂在III-V半导体化合物技术中的应用

A. V. Kamanin, I. Mokina, N. Shmidt, L. A. Busygina, T. A. Yurre
{"title":"聚合物扩散剂在III-V半导体化合物技术中的应用","authors":"A. V. Kamanin, I. Mokina, N. Shmidt, L. A. Busygina, T. A. Yurre","doi":"10.1109/ICIPRM.1996.492047","DOIUrl":null,"url":null,"abstract":"A Zn diffusion technique into III-V compounds from polymer spin-on films has been devised that allows to retain the initial surface morphology without any additional operations. This essentially simplifies the process. Moreover, the method provides a high portion (about 100%) of the electrically active Zn at N/sub Zn/<L(Zn). The technique shows promise for applying in the technology of III-V compound devices. The possibilities for the local diffusion through the windows of the SiO/sub 2/ mask with retention of dielectric properties of the mask is pointed out. During the Zn diffusion into Al/sub x/Ga/sub 1-x/As gettering of the Al atoms was observed that allowed to obtain the high Zn atoms concentration at their near-total activation. This process resulted in homogenization of the near-surface regions.","PeriodicalId":268278,"journal":{"name":"Proceedings of 8th International Conference on Indium Phosphide and Related Materials","volume":"15 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1996-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"Polymer diffusants in III-V semiconductor compounds technology\",\"authors\":\"A. V. Kamanin, I. Mokina, N. Shmidt, L. A. Busygina, T. A. Yurre\",\"doi\":\"10.1109/ICIPRM.1996.492047\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A Zn diffusion technique into III-V compounds from polymer spin-on films has been devised that allows to retain the initial surface morphology without any additional operations. This essentially simplifies the process. Moreover, the method provides a high portion (about 100%) of the electrically active Zn at N/sub Zn/<L(Zn). The technique shows promise for applying in the technology of III-V compound devices. The possibilities for the local diffusion through the windows of the SiO/sub 2/ mask with retention of dielectric properties of the mask is pointed out. During the Zn diffusion into Al/sub x/Ga/sub 1-x/As gettering of the Al atoms was observed that allowed to obtain the high Zn atoms concentration at their near-total activation. This process resulted in homogenization of the near-surface regions.\",\"PeriodicalId\":268278,\"journal\":{\"name\":\"Proceedings of 8th International Conference on Indium Phosphide and Related Materials\",\"volume\":\"15 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1996-04-21\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of 8th International Conference on Indium Phosphide and Related Materials\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICIPRM.1996.492047\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of 8th International Conference on Indium Phosphide and Related Materials","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICIPRM.1996.492047","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 3

摘要

设计了一种Zn从聚合物自旋膜扩散到III-V化合物的技术,该技术允许保留初始表面形态而无需任何额外的操作。这从本质上简化了过程。此外,该方法在N/sub Zn/本文章由计算机程序翻译,如有差异,请以英文原文为准。
分享
查看原文 本刊更多论文
Polymer diffusants in III-V semiconductor compounds technology
A Zn diffusion technique into III-V compounds from polymer spin-on films has been devised that allows to retain the initial surface morphology without any additional operations. This essentially simplifies the process. Moreover, the method provides a high portion (about 100%) of the electrically active Zn at N/sub Zn/
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信