T. Coffman, D. Boyd, D. Dolby, M. Gill, S. Kady, R. Lahiry, Sun Lin, D. McEkroy, A. Mitchell, J. Paterson, J. Schreck, P. Shah, F. Takeda
{"title":"一个1Mb的CMOS EPROM, 13.5µm2cell","authors":"T. Coffman, D. Boyd, D. Dolby, M. Gill, S. Kady, R. Lahiry, Sun Lin, D. McEkroy, A. Mitchell, J. Paterson, J. Schreck, P. Shah, F. Takeda","doi":"10.1109/ISSCC.1987.1157140","DOIUrl":null,"url":null,"abstract":"A 64K×16b EPROM with an access time of 159ns will be reported. Buried diffusion reduces the number of array contacts to one every 16b. The circuit includes eight test features and requires a program time of 65ns for the complete array.","PeriodicalId":102932,"journal":{"name":"1987 IEEE International Solid-State Circuits Conference. Digest of Technical Papers","volume":"160 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"A 1Mb CMOS EPROM with a 13.5µm2cell\",\"authors\":\"T. Coffman, D. Boyd, D. Dolby, M. Gill, S. Kady, R. Lahiry, Sun Lin, D. McEkroy, A. Mitchell, J. Paterson, J. Schreck, P. Shah, F. Takeda\",\"doi\":\"10.1109/ISSCC.1987.1157140\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A 64K×16b EPROM with an access time of 159ns will be reported. Buried diffusion reduces the number of array contacts to one every 16b. The circuit includes eight test features and requires a program time of 65ns for the complete array.\",\"PeriodicalId\":102932,\"journal\":{\"name\":\"1987 IEEE International Solid-State Circuits Conference. Digest of Technical Papers\",\"volume\":\"160 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1900-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1987 IEEE International Solid-State Circuits Conference. Digest of Technical Papers\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISSCC.1987.1157140\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1987 IEEE International Solid-State Circuits Conference. Digest of Technical Papers","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISSCC.1987.1157140","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A 64K×16b EPROM with an access time of 159ns will be reported. Buried diffusion reduces the number of array contacts to one every 16b. The circuit includes eight test features and requires a program time of 65ns for the complete array.
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