模式匹配分时双忆阻横条变化容差的统计分析

S. N. Truong, K. Pham, Wonsun Yang, K. Min
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摘要

本文分析了分时双忆阻交叉棒(TMC)在各种相关参数和内相关参数下的容差变化。在这里,电阻的百分比变化从0%增加到40%。本文进行的统计分析表明,当假设一个阵列中所有忆阻器的变化是随机的,即阵列内相关系数为零时,原始TMC和分时TMC对忆阻变化的容忍度几乎相同。然而,当阵列内相关系数达到1时,即同一阵列中所有忆阻器的变化相互关联时,分时TMC的识别率比原始TMC平均提高了5%。从统计仿真结果可以看出,在模式匹配应用中,分时TMC比原TMC具有更好的容错性。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Statistical analysis on variation tolerance of time-shared Twin Memristor Crossbar for pattern matching
In this paper, we analyze the variation tolerance of time-shared Twin Memristor Crossbar (TMC) for various inter-correlation and intra-correlation parameters. Here the percentage variation in memristance is increased from 0% to 40%. The statistical analysis performed here indicates the original TMC and the time-shared TMC show almost the same tolerance to memristance variation when the variation of all memristors in one array are assumed random, referred to as intra-array correlation is zero. However, when the intra-array correlation becomes as high as 1, in other words, variations of all memristors in the same array are correlated each other, the time-shared TMC shows better recognition rate by 5% on average, compared to the original TMC. From the statistical simulation results, we can expect the time-shared TMC has better variation-tolerance than the original TMC, in pattern matching application.
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