零场/低场SDR和SDT用于NBTI和TDDB的原子尺度探针

2013 IEEE International Integrated Reliability Workshop Final Report Pub Date : 2013-10-01 DOI:10.1109/IIRW.2013.6804165

C. Cochrane, P. Lenahan

{"title":"零场/低场SDR和SDT用于NBTI和TDDB的原子尺度探针","authors":"C. Cochrane, P. Lenahan","doi":"10.1109/IIRW.2013.6804165","DOIUrl":null,"url":null,"abstract":"This work focuses on the use of a zero- and low-field detection technique of spin dependent recombination and spin dependent tunneling used for studying the bias temperature instabilities in MOSFETs and time dependent dielectric breakdown in this film dielectrics.","PeriodicalId":287904,"journal":{"name":"2013 IEEE International Integrated Reliability Workshop Final Report","volume":"27 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2013-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Zero/low field SDR and SDT used for atomic scale probes of NBTI and TDDB\",\"authors\":\"C. Cochrane, P. Lenahan\",\"doi\":\"10.1109/IIRW.2013.6804165\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This work focuses on the use of a zero- and low-field detection technique of spin dependent recombination and spin dependent tunneling used for studying the bias temperature instabilities in MOSFETs and time dependent dielectric breakdown in this film dielectrics.\",\"PeriodicalId\":287904,\"journal\":{\"name\":\"2013 IEEE International Integrated Reliability Workshop Final Report\",\"volume\":\"27 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2013-10-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2013 IEEE International Integrated Reliability Workshop Final Report\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IIRW.2013.6804165\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2013 IEEE International Integrated Reliability Workshop Final Report","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IIRW.2013.6804165","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 1

摘要

本文主要研究了自旋相关复合和自旋相关隧道的零场和低场探测技术，用于研究mosfet的偏置温度不稳定性和薄膜介质的时间相关介电击穿。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Zero/low field SDR and SDT used for atomic scale probes of NBTI and TDDB

This work focuses on the use of a zero- and low-field detection technique of spin dependent recombination and spin dependent tunneling used for studying the bias temperature instabilities in MOSFETs and time dependent dielectric breakdown in this film dielectrics.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2013 IEEE International Integrated Reliability Workshop Final Report

自引率

0.00%

发文量