超薄原子层沉积膜耐腐蚀

A. Haemmerli, Joseph C. Doll, J. Provine, R. T. Howe, David Goldhaber-Gordon, Beth L. Pruitt
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引用次数: 10

摘要

我们评估了通过原子层沉积(ALD)沉积的超薄膜的化学和电化学耐腐蚀性,用于潜在的生物医学微器件的晶圆级钝化。各种ALD涂层可以在低温下在金属或硅表面上共形沉积。我们使用5nm Al2O3和5nm HfO2的双ALD膜层可以在1V电压应力下保护铝电极200小时。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Ultra-thin atomic layer deposition films for corrosion resistance
We evaluated the chemical and electrochemical corrosion resistance of ultra-thin films deposited via atomic layer deposition (ALD) for potential wafer-scale passivation of biomedical microdevices. A variety of ALD coatings can be deposited conformally on metal or silicon surfaces at low temperature. We were able to protect aluminum electrodes against corrosion in ionic media with a voltage stress of 1V for 200 hours using a double ALD film stack of 5nm Al2O3 and 5nm HfO2.
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