ZnTe基黄绿色激光二极管的激光操作

63rd Device Research Conference Digest, 2005. DRC '05. Pub Date : 2005-06-22 DOI:10.1109/DRC.2005.1553040

A. Kikuchi, A. Manoshiro, I. Nomura, K. Kishino

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引用次数: 1

摘要

首次实现了具有ZnCdTe有源层和MgZnSeTe包层的ZnTe基黄绿光半导体激光二极管的电流注入激光操作。研究了低温下单脉冲电流注入模式下的激光特性。在100 K时，LD的最低阈值电流密度为2.7 kA/cm2。最大激光温度为175 K，激光波长为564 ~ 576 nm

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Lasing operation of ZnTe based yellow-green laser diodes

Current injection lasing operation of ZnTe based yellow-green light semiconductor laser diodes (LDs) with ZnCdTe active layer and MgZnSeTe cladding layers have been achieved, for the first time. The lasing characteristics were evaluated with a single pulse current injection mode at low temperature. The lowest threshold current density of the LD was 2.7 kA/cm2 at 100 K. The maximum lasing temperature was 175 K and the observed lasing wavelength ranged from 564 to 576 nm

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63rd Device Research Conference Digest, 2005. DRC '05.

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