{"title":"宽动态范围MEMS磁强计与振荡器的集成设计","authors":"Chao Song, K. Wen","doi":"10.1109/SMELEC.2018.8481282","DOIUrl":null,"url":null,"abstract":"This paper presents a Lorentz current-based MEMS magnetometer integrated with MEMS oscillator. The auto capacitance offset calibration magnetometer can achieve a tunable sensitivity from 12 to 2.94×106 T/V and eliminate the capacitance mismatch caused by process variation under 0.084fF by SAR calibrator. The natural frequency of proposed differential oscillator is around 18.8 kHz, Q-factor of 183 under the bias voltage 20 V and at 760Torr ambient pressure. The proposed biasing method of oscillator obtains a frequency tuning range of 58510 ppm, resulting in a wide-dynamic-range which is about 107.8dB. FOM of the oscillator design is 4.75×1020 Hz2Ω2. The integrated magnetometer and oscillator is implemented in 1P6M ASIC compatible CMOS MEMS process.","PeriodicalId":110608,"journal":{"name":"2018 IEEE International Conference on Semiconductor Electronics (ICSE)","volume":"8 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":"{\"title\":\"Integration Design of Wide-Dynamic-Range MEMS Magnetometer and Oscillator\",\"authors\":\"Chao Song, K. Wen\",\"doi\":\"10.1109/SMELEC.2018.8481282\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper presents a Lorentz current-based MEMS magnetometer integrated with MEMS oscillator. The auto capacitance offset calibration magnetometer can achieve a tunable sensitivity from 12 to 2.94×106 T/V and eliminate the capacitance mismatch caused by process variation under 0.084fF by SAR calibrator. The natural frequency of proposed differential oscillator is around 18.8 kHz, Q-factor of 183 under the bias voltage 20 V and at 760Torr ambient pressure. The proposed biasing method of oscillator obtains a frequency tuning range of 58510 ppm, resulting in a wide-dynamic-range which is about 107.8dB. FOM of the oscillator design is 4.75×1020 Hz2Ω2. The integrated magnetometer and oscillator is implemented in 1P6M ASIC compatible CMOS MEMS process.\",\"PeriodicalId\":110608,\"journal\":{\"name\":\"2018 IEEE International Conference on Semiconductor Electronics (ICSE)\",\"volume\":\"8 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2018-08-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"4\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2018 IEEE International Conference on Semiconductor Electronics (ICSE)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SMELEC.2018.8481282\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 IEEE International Conference on Semiconductor Electronics (ICSE)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SMELEC.2018.8481282","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Integration Design of Wide-Dynamic-Range MEMS Magnetometer and Oscillator
This paper presents a Lorentz current-based MEMS magnetometer integrated with MEMS oscillator. The auto capacitance offset calibration magnetometer can achieve a tunable sensitivity from 12 to 2.94×106 T/V and eliminate the capacitance mismatch caused by process variation under 0.084fF by SAR calibrator. The natural frequency of proposed differential oscillator is around 18.8 kHz, Q-factor of 183 under the bias voltage 20 V and at 760Torr ambient pressure. The proposed biasing method of oscillator obtains a frequency tuning range of 58510 ppm, resulting in a wide-dynamic-range which is about 107.8dB. FOM of the oscillator design is 4.75×1020 Hz2Ω2. The integrated magnetometer and oscillator is implemented in 1P6M ASIC compatible CMOS MEMS process.