纳米压痕对Ψ-MOSFET结构电特性的影响

2018 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS) Pub Date : 2018-03-01 DOI:10.1109/ULIS.2018.8354754

L. Benea, T. Cerba, M. Bawedin, C. Delacour, S. Cristoloveanu, I. Ionica

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引用次数: 2

摘要

介绍了探针诱导纳米压痕对Ψ-MOSFET中电输运的影响。为了评估漏极电流在不同工作状态下对探头压力的依赖性，进行了系统的测量。这使得研究硅的金属Si-II晶体形式的存在成为可能，它在高压下出现，并在积累机制中显示出显著的影响。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Nanoindentation effects on the electrical caracterizaron in Ψ-MOSFET configuration

The effect of probe-induced nanoindentation on the electrical transport in Ψ-MOSFET is presented. Systematic measurements were performed in order to evaluate the dependence of the drain current on the probe pressure in different operating regimes. This enabled to investigate the existence of the metallic Si-II crystallographic form of silicon, which emerges at high pressures and shows a significant impact in the accumulation regime.

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2018 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)

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