三维封装的电气性能分析

Seung-Ho Ahn, Kyung-Sun Lee, Se-Young Oh, E. Miersch
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引用次数: 1

摘要

三维封装被认为提供了高封装密度和增强电气性能的解决方案,这是当前和未来电子系统所需要的。最近研制出了一种新型的三维包装。这些被命名为“存储立方体”,其中堆叠了薄的小轮廓j型引线封装或薄的四平面j型引线封装,并通过焊接外部引线进行电连接。通过对一个4mb /spl次/9 DRAM存储器立方体和一个等效的4mb /spl次/9 DRAM单内联存储器模块的电学模拟,分析了作为计算机系统主存储器的存储器立方体的电学性能。电学模拟结果表明,存储器立方体将典型存储器板上最长网的电容负载降低了5%至10%,通过其集总负载特性降低了这些网的反射行为,与等效的单个内联存储器模块相比,驱动器到接收器的总体性能提高了约15%。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Electrical performance analysis of a three-dimensional package
Three-dimensional packaging is considered to offer a solution for high packaging density and enhanced electrical performance, which are required for the present and future electronic systems. A new type of three-dimensional package was recently developed. These were named "memory cubes", in which thin small outline J-leaded packages or thin quad flat J-leaded packages were stacked, and electrically interconnected by soldering of the outer leads. Analyses of electrical performances of the memory cubes as the main memories in a computer system were made through the electrical simulations of a 4 Mb/spl times/9 DRAM memory cube and an equivalent 4 Mb/spl times/9 DRAM single inline memory module. Electrical simulation showed that memory cube reduced the capacitance load of the longest on-board nets of typical memory board by 5% to 10%, reduced the reflection behavior of these nets by its lumped load character, and resulted in an overall driver-to-receiver net performance improvement versus the equivalent single inline memory module by about 15%.
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