Seung-Ho Ahn, Kyung-Sun Lee, Se-Young Oh, E. Miersch
{"title":"三维封装的电气性能分析","authors":"Seung-Ho Ahn, Kyung-Sun Lee, Se-Young Oh, E. Miersch","doi":"10.1109/IEMT.1995.526102","DOIUrl":null,"url":null,"abstract":"Three-dimensional packaging is considered to offer a solution for high packaging density and enhanced electrical performance, which are required for the present and future electronic systems. A new type of three-dimensional package was recently developed. These were named \"memory cubes\", in which thin small outline J-leaded packages or thin quad flat J-leaded packages were stacked, and electrically interconnected by soldering of the outer leads. Analyses of electrical performances of the memory cubes as the main memories in a computer system were made through the electrical simulations of a 4 Mb/spl times/9 DRAM memory cube and an equivalent 4 Mb/spl times/9 DRAM single inline memory module. Electrical simulation showed that memory cube reduced the capacitance load of the longest on-board nets of typical memory board by 5% to 10%, reduced the reflection behavior of these nets by its lumped load character, and resulted in an overall driver-to-receiver net performance improvement versus the equivalent single inline memory module by about 15%.","PeriodicalId":123707,"journal":{"name":"Seventeenth IEEE/CPMT International Electronics Manufacturing Technology Symposium. 'Manufacturing Technologies - Present and Future'","volume":"75 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1995-10-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Electrical performance analysis of a three-dimensional package\",\"authors\":\"Seung-Ho Ahn, Kyung-Sun Lee, Se-Young Oh, E. Miersch\",\"doi\":\"10.1109/IEMT.1995.526102\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Three-dimensional packaging is considered to offer a solution for high packaging density and enhanced electrical performance, which are required for the present and future electronic systems. A new type of three-dimensional package was recently developed. These were named \\\"memory cubes\\\", in which thin small outline J-leaded packages or thin quad flat J-leaded packages were stacked, and electrically interconnected by soldering of the outer leads. Analyses of electrical performances of the memory cubes as the main memories in a computer system were made through the electrical simulations of a 4 Mb/spl times/9 DRAM memory cube and an equivalent 4 Mb/spl times/9 DRAM single inline memory module. Electrical simulation showed that memory cube reduced the capacitance load of the longest on-board nets of typical memory board by 5% to 10%, reduced the reflection behavior of these nets by its lumped load character, and resulted in an overall driver-to-receiver net performance improvement versus the equivalent single inline memory module by about 15%.\",\"PeriodicalId\":123707,\"journal\":{\"name\":\"Seventeenth IEEE/CPMT International Electronics Manufacturing Technology Symposium. 'Manufacturing Technologies - Present and Future'\",\"volume\":\"75 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1995-10-02\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Seventeenth IEEE/CPMT International Electronics Manufacturing Technology Symposium. 'Manufacturing Technologies - Present and Future'\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IEMT.1995.526102\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Seventeenth IEEE/CPMT International Electronics Manufacturing Technology Symposium. 'Manufacturing Technologies - Present and Future'","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEMT.1995.526102","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Electrical performance analysis of a three-dimensional package
Three-dimensional packaging is considered to offer a solution for high packaging density and enhanced electrical performance, which are required for the present and future electronic systems. A new type of three-dimensional package was recently developed. These were named "memory cubes", in which thin small outline J-leaded packages or thin quad flat J-leaded packages were stacked, and electrically interconnected by soldering of the outer leads. Analyses of electrical performances of the memory cubes as the main memories in a computer system were made through the electrical simulations of a 4 Mb/spl times/9 DRAM memory cube and an equivalent 4 Mb/spl times/9 DRAM single inline memory module. Electrical simulation showed that memory cube reduced the capacitance load of the longest on-board nets of typical memory board by 5% to 10%, reduced the reflection behavior of these nets by its lumped load character, and resulted in an overall driver-to-receiver net performance improvement versus the equivalent single inline memory module by about 15%.