一个q波段1瓦30%功率增益效率的异质结场效应管

GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium 17th Annual Technical Digest 1995 Pub Date : 1995-10-29 DOI:10.1109/GAAS.1995.529015

S. Arai, H. Mizuno, H. Tanaka, H. Yoshinaga, K. Masuda, B. Abe, M. Kawano, H. Tokuda, K. Shibata

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引用次数: 1

摘要

研制了栅极宽度分别为400、800、1600和2400 /spl mu/m的q波段异质结功率场效应管系列。fet使用n型GaAs层作为通道，AlGaAs层作为肖特基接触层。每个场效应管具有两个单元配置，用于输入和输出匹配网络的单片集成1/4波长阻抗变压器。栅极宽度为2400 /spl mu/m的器件输出功率为30 dBm，增益为4.4 dB，功率附加效率为30.1%。

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A Q-band 1 watt 30% power-added-efficiency hetero-junction FET

A series of Q-band hetero-junction power FETs with gate widths of 400, 800, 1600 and 2400 /spl mu/m has been developed. The FETs use an n-type GaAs layer as a channel with an AlGaAs layer as a Schottky contact layer. Each FET has two cell configuration with monolithically integrated 1/4 wavelength impedance transformer for the input and output matching networks. The 2400 /spl mu/m-gate-width device delivered an output power of 30 dBm with 4.4 dB gain and 30.1% power-added-efficiency.

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GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium 17th Annual Technical Digest 1995

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