mosfet中异常正电荷的放电和再充电

1998 5th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.98EX105) Pub Date : 1998-10-21 DOI:10.1109/ICSICT.1998.785880

Yongjun Wu, Mingzhen Xu, Changhua Tan, Jian-Lin Wei, Yi Liang, Yangyuan Wang

{"title":"mosfet中异常正电荷的放电和再充电","authors":"Yongjun Wu, Mingzhen Xu, Changhua Tan, Jian-Lin Wei, Yi Liang, Yangyuan Wang","doi":"10.1109/ICSICT.1998.785880","DOIUrl":null,"url":null,"abstract":"The discharging of positive charges is found to increase with bias. Following the same discharging, higher recharging bias leads to larger recharging of APC. However, under the same recharging bias with different previous discharging, the recharging does show a different response. In particular, there is larger recharging after the larger previous discharging, whatever the same recharging bias.","PeriodicalId":286980,"journal":{"name":"1998 5th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.98EX105)","volume":"24 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1998-10-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Discharging and recharging of anomalous positive charges in MOSFETs\",\"authors\":\"Yongjun Wu, Mingzhen Xu, Changhua Tan, Jian-Lin Wei, Yi Liang, Yangyuan Wang\",\"doi\":\"10.1109/ICSICT.1998.785880\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The discharging of positive charges is found to increase with bias. Following the same discharging, higher recharging bias leads to larger recharging of APC. However, under the same recharging bias with different previous discharging, the recharging does show a different response. In particular, there is larger recharging after the larger previous discharging, whatever the same recharging bias.\",\"PeriodicalId\":286980,\"journal\":{\"name\":\"1998 5th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.98EX105)\",\"volume\":\"24 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1998-10-21\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1998 5th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.98EX105)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICSICT.1998.785880\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1998 5th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.98EX105)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICSICT.1998.785880","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

发现正电荷的放电随着偏置的增加而增加。在相同的放电条件下，越高的充电偏压导致APC的再充电越大。但是，在相同的充电偏压和不同的前次放电情况下，充电确实表现出不同的响应。特别是，无论相同的充电偏压，在之前较大的放电之后都会有更大的充电。

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Discharging and recharging of anomalous positive charges in MOSFETs

The discharging of positive charges is found to increase with bias. Following the same discharging, higher recharging bias leads to larger recharging of APC. However, under the same recharging bias with different previous discharging, the recharging does show a different response. In particular, there is larger recharging after the larger previous discharging, whatever the same recharging bias.

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1998 5th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.98EX105)

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