一种基于扩展带宽RLC拓扑的新型超宽带低噪声放大器

Saeed Ghaneei Aarani, M. Mehranpouy, B. Gosselin
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引用次数: 0

摘要

本文提出了一种新的电路技术来扩展超宽带(UWB)低噪声放大器的带宽。所提出的电路由标准对称中心抽头电感器和连接到中心抽头引脚的RC系列网络组成。在并联调峰方法中去除串联电阻允许增加LNA的净空电压。因此,直流电流可以增加,以受益于较大的S21。采用该电路的差分共门LNA采用0.18 μm TSMC CMOS技术实现。LNA在4.33 GHz到13.9 GHz范围内工作,整个带宽为11.3±0.5 dB,小于-10 dB。此外,LNA结合了所提出的方法和传统的交叉耦合电容器(CCC)技术,实现了3.84 dB的最小噪声系数(NF)。布局后仿真显示,电源电压为0.75 V时,功耗为2.5 mW。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A Novel Ultra-Wideband Low-Noise Amplifier Using an Extended Bandwidth RLC Topology
In this paper, a novel circuit technique is presented to extend the bandwidth of an ultra-wideband (UWB) low-noise amplifier (LNA). The proposed circuit consists of a standard symmetric center-tapped inductor and an RC series network that is connected to the center-tapped pin. Removing the series resistor in the shunt-peaking method allows increasing the headroom voltage of the LNA. Consequently, the DC current can be increased to benefit from larger S21. A differential common-gate LNA using the presented circuit is implemented in a CMOS 0.18-μm TSMC technology. The LNA operates from 4.33 GHz up to 13.9 GHz while is 11.3±0.5 dB and is less than -10 dB over the whole of the bandwidth. Furthermore, the LNA using a combination of the proposed approach and a conventional cross-coupled capacitor (CCC) technique achieves a minimum noise figure (NF) of 3.84 dB. Post-layout simulation shows power dissipation of 2.5 mW, while the supply voltage is 0.75 V.
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