一种实用的GaN封装器件高频去嵌入网络

2016 IEEE MTT-S International Wireless Symposium (IWS) Pub Date : 2016-03-14 DOI:10.1109/IEEE-IWS.2016.7585473

S. Dong, P. Tasker, Guofeng Wang, J. Lees

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引用次数: 1

摘要

器件的内在性能在功率放大器设计中具有重要意义。提出了一种基于物理建模思想的高频更新封装电力器件去嵌入网络的方法。提出了封装GaN HEMT的5.8 GHz去嵌入网络，并通过误差分析验证了其实用性。该方法有望应用于其他封装微波器件。

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A practicable de-embedding network at higher frequency of a packaged GaN device

The intrinsic performance of the devices is of great meaning during power amplifiers design. A method to update de-embedding network at higher frequency for packaged power devices is put forward based on physical modeling idea. The de-embedding network at 5.8 GHz of a packaged GaN HEMT is presented and its practicability is verified through error analysis. This method is prospected to be applied to other packaged microwave devices.

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2016 IEEE MTT-S International Wireless Symposium (IWS)

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