{"title":"11Gb/s单片集成硅光接收器，850nm波长","authors":"R. Swoboda, H. Zimmermann","doi":"10.1109/ISSCC.2006.1696131","DOIUrl":null,"url":null,"abstract":"A monolithically integrated optical receiver is realized in a modified silicon 0.5mum BiCMOS process with fT=25 GHz that contains a pin photodiode. At a wavelength of 850nm, a BER of 10-9 , a PRBS of 231-1, the receiver has sensitivities of -10.8dBm, -10.1dBm, and -8.9dBm for data rates of 8Gb/s, 10Gb/s, and 11Gb/s, respectively","PeriodicalId":166617,"journal":{"name":"2006 IEEE International Solid State Circuits Conference - Digest of Technical Papers","volume":"53 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2006-09-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"36","resultStr":"{\"title\":\"11Gb/s monolithically integrated silicon optical receiver for 850nm wavelength\",\"authors\":\"R. Swoboda, H. Zimmermann\",\"doi\":\"10.1109/ISSCC.2006.1696131\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A monolithically integrated optical receiver is realized in a modified silicon 0.5mum BiCMOS process with fT=25 GHz that contains a pin photodiode. At a wavelength of 850nm, a BER of 10-9 , a PRBS of 231-1, the receiver has sensitivities of -10.8dBm, -10.1dBm, and -8.9dBm for data rates of 8Gb/s, 10Gb/s, and 11Gb/s, respectively\",\"PeriodicalId\":166617,\"journal\":{\"name\":\"2006 IEEE International Solid State Circuits Conference - Digest of Technical Papers\",\"volume\":\"53 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2006-09-18\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"36\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2006 IEEE International Solid State Circuits Conference - Digest of Technical Papers\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISSCC.2006.1696131\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2006 IEEE International Solid State Circuits Conference - Digest of Technical Papers","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISSCC.2006.1696131","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
11Gb/s monolithically integrated silicon optical receiver for 850nm wavelength
A monolithically integrated optical receiver is realized in a modified silicon 0.5mum BiCMOS process with fT=25 GHz that contains a pin photodiode. At a wavelength of 850nm, a BER of 10-9 , a PRBS of 231-1, the receiver has sensitivities of -10.8dBm, -10.1dBm, and -8.9dBm for data rates of 8Gb/s, 10Gb/s, and 11Gb/s, respectively
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