相关pin光电探测器与新的差分积分器概念的测距应用

Proceedings of the 31st European Solid-State Circuits Conference, 2005. ESSCIRC 2005. Pub Date : 2005-12-05 DOI:10.1109/ESSCIR.2005.1541667

A. Nemecek, K. Oberhauser, H. Zimmermann

{"title":"相关pin光电探测器与新的差分积分器概念的测距应用","authors":"A. Nemecek, K. Oberhauser, H. Zimmermann","doi":"10.1109/ESSCIR.2005.1541667","DOIUrl":null,"url":null,"abstract":"Exploiting the benefits of PIN photodiodes, a correlating detector and a novel difference integrator concept were realized in a single-chip range-finder solution. The PIN photodetector performing already internal modulation has a responsivity of R=0.30A/W at 660nm. A bandwidth of f/sub 3dB/=250MHz with correlation gates on thin oxide, respectively 500MHz on field oxide were achieved. Both challenges of the distance measurement - high sensitivity for signals in the order of nW and accuracies of 1.6% (1.7%) for 10m (15m) - could be reached. The measurement range goes from 20cm to 15m. The chip was realized in a modified 0.6nm BiCMOS process. Effective pixel size is /spl sim/250 /spl times/170/spl mu/m/sup 2/ including the photoreceiver of /spl sim/100 /spl times/ 100 /spl mu/m/sup 2/ resulting in a fill factor of /spl sim/24%.","PeriodicalId":239980,"journal":{"name":"Proceedings of the 31st European Solid-State Circuits Conference, 2005. ESSCIRC 2005.","volume":"72 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2005-12-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"7","resultStr":"{\"title\":\"Correlating PIN-photodetector with novel difference-integrator concept for range-finding applications\",\"authors\":\"A. Nemecek, K. Oberhauser, H. Zimmermann\",\"doi\":\"10.1109/ESSCIR.2005.1541667\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Exploiting the benefits of PIN photodiodes, a correlating detector and a novel difference integrator concept were realized in a single-chip range-finder solution. The PIN photodetector performing already internal modulation has a responsivity of R=0.30A/W at 660nm. A bandwidth of f/sub 3dB/=250MHz with correlation gates on thin oxide, respectively 500MHz on field oxide were achieved. Both challenges of the distance measurement - high sensitivity for signals in the order of nW and accuracies of 1.6% (1.7%) for 10m (15m) - could be reached. The measurement range goes from 20cm to 15m. The chip was realized in a modified 0.6nm BiCMOS process. Effective pixel size is /spl sim/250 /spl times/170/spl mu/m/sup 2/ including the photoreceiver of /spl sim/100 /spl times/ 100 /spl mu/m/sup 2/ resulting in a fill factor of /spl sim/24%.\",\"PeriodicalId\":239980,\"journal\":{\"name\":\"Proceedings of the 31st European Solid-State Circuits Conference, 2005. ESSCIRC 2005.\",\"volume\":\"72 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2005-12-05\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"7\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of the 31st European Solid-State Circuits Conference, 2005. ESSCIRC 2005.\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ESSCIR.2005.1541667\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the 31st European Solid-State Circuits Conference, 2005. ESSCIRC 2005.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ESSCIR.2005.1541667","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 7

摘要

利用PIN光电二极管的优点，在单芯片测距解决方案中实现了相关检测器和差分积分器的新概念。执行内部调制的PIN光电探测器在660nm处的响应率为R=0.30A/W。在薄氧化物上实现了f/sub 3dB/=250MHz的带宽，在场氧化物上分别实现了500MHz的带宽。距离测量的两个挑战-对nW数量级的信号的高灵敏度和10米(15米)的1.6%(1.7%)精度-可以达到。测量范围从20cm到15m。该芯片采用改进的0.6nm BiCMOS工艺实现。有效像素大小为/spl sim/250 /spl times/170/spl mu/m/sup 2/，包括/spl sim/100 /spl times/ 100 /spl mu/m/sup 2/的光电接收器，因此填充系数为/spl sim/24%。

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Correlating PIN-photodetector with novel difference-integrator concept for range-finding applications

Exploiting the benefits of PIN photodiodes, a correlating detector and a novel difference integrator concept were realized in a single-chip range-finder solution. The PIN photodetector performing already internal modulation has a responsivity of R=0.30A/W at 660nm. A bandwidth of f/sub 3dB/=250MHz with correlation gates on thin oxide, respectively 500MHz on field oxide were achieved. Both challenges of the distance measurement - high sensitivity for signals in the order of nW and accuracies of 1.6% (1.7%) for 10m (15m) - could be reached. The measurement range goes from 20cm to 15m. The chip was realized in a modified 0.6nm BiCMOS process. Effective pixel size is /spl sim/250 /spl times/170/spl mu/m/sup 2/ including the photoreceiver of /spl sim/100 /spl times/ 100 /spl mu/m/sup 2/ resulting in a fill factor of /spl sim/24%.

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Proceedings of the 31st European Solid-State Circuits Conference, 2005. ESSCIRC 2005.

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