重复过电压应力作用下gan - hemt的失效过程

W. Saito, S. Nishizawa
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引用次数: 0

摘要

通过脉冲波形和C-V特性位移分析了gan - hemt的过电压应力失效过程。gan - hemt的一个关键缺点是它缺乏抗UIS能力,因为它没有雪崩击穿产生的孔的去除结构。虽然已经通过动态击穿电压讨论了氮化镓功率变换器的过电压裕度,但过电压应力引起的失效过程尚未得到充分的讨论。通过重复过电压应力可以观察到漏极与衬底之间局部分路产生的过电压应力、梯度介质击穿和空穴阱/去阱。这些结果验证了gan - hemt在过电压应力下的灾难性失效是由异质外延层中高垂直电场激活的渗透过程引起的。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Failure Process of GaN-HEMTs by Repetitive Overvoltage Stress
Failure process by overvoltage stress in GaN-HEMTs is discussed by burst UIS waveforms and C-V characteristics shift. One of the critical disadvantages of GaN-HEMTs is its lack of the UIS withstanding capability, because there is no removal structure of holes, which generated by the avalanche breakdown. Although overvoltage margin for the GaN power converters has been discussed by dynamic breakdown voltage, failure process by overvoltage stress has not been discussed sufficiently. This paper shows that overvoltage stress generated local shunt path between drain and substrate, graduated dielectric breakdown and hole trap/de-trap were observed by repetitive overvoltage stress. These results verify catastrophic failure of GaN-HEMTs by overvoltage stress is ascribed to a percolation process activated by the high-vertical electric field in hetero-epitaxial layers.
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