Modeling of fully printed organic field effect transistors for circuit design and simulation

Organic field effect transistors (OFETs) have significantly improved during recent years. However, there is still a lack of complete compact models for these devices, due to different materials, device structures, and manufacturing processes. Previous studies on compact OFET modeling have only considered static I-V characteristics, which are subject to the bias-stress effect. In this study, for the first time, two different large-signal OFET models are optimized to small-signal experimental data, which are less sensitive to the bias-stress effect. Li's and Estrada's models are studied overall I-V regions, from sub-threshold to above-threshold, and from linear to saturation region with unified formulations. It is found that Estrada's model fits better to the trans-conductance, whereas the Li's model fits better to the intrinsic gain. Both models are implemented in ADS circuit simulator, using the Verilog-A programming language. The bootstrapped amplifier is simulated and is compared with measurement data.