S. Chiang, R. Wang, T. Speers, J. Mccollum, E. Hamdy, C. Hu
{"title":"ONO中的导电通道由受控介质击穿形成","authors":"S. Chiang, R. Wang, T. Speers, J. Mccollum, E. Hamdy, C. Hu","doi":"10.1109/VLSIT.1992.200623","DOIUrl":null,"url":null,"abstract":"Cross-section TEM photos that capture the conductive channel of oxide-nitride-oxide (ONO) films after electric breakdown are discussed. The photos reveal a single crystal or polycrystal channel with a dome-shaped cap depending on the breakdown current. The implications of this structure for electric characteristics is analyzed with a spherical thermal-electric model. When ONO films are used as antifuse on FPGA product, the resistance of the antifuse can be controlled by choosing a sufficiently large programming current level and the resistance remains stable during 1000 h of burn-in at 125 degrees C and 5.75 V. Negligible change in delay time along many different data paths was observed.<<ETX>>","PeriodicalId":404756,"journal":{"name":"1992 Symposium on VLSI Technology Digest of Technical Papers","volume":"58 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1992-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"19","resultStr":"{\"title\":\"Conductive channel in ONO formed by controlled dielectric breakdown\",\"authors\":\"S. Chiang, R. Wang, T. Speers, J. Mccollum, E. Hamdy, C. Hu\",\"doi\":\"10.1109/VLSIT.1992.200623\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Cross-section TEM photos that capture the conductive channel of oxide-nitride-oxide (ONO) films after electric breakdown are discussed. The photos reveal a single crystal or polycrystal channel with a dome-shaped cap depending on the breakdown current. The implications of this structure for electric characteristics is analyzed with a spherical thermal-electric model. When ONO films are used as antifuse on FPGA product, the resistance of the antifuse can be controlled by choosing a sufficiently large programming current level and the resistance remains stable during 1000 h of burn-in at 125 degrees C and 5.75 V. Negligible change in delay time along many different data paths was observed.<<ETX>>\",\"PeriodicalId\":404756,\"journal\":{\"name\":\"1992 Symposium on VLSI Technology Digest of Technical Papers\",\"volume\":\"58 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1992-06-02\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"19\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1992 Symposium on VLSI Technology Digest of Technical Papers\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/VLSIT.1992.200623\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1992 Symposium on VLSI Technology Digest of Technical Papers","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/VLSIT.1992.200623","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Conductive channel in ONO formed by controlled dielectric breakdown
Cross-section TEM photos that capture the conductive channel of oxide-nitride-oxide (ONO) films after electric breakdown are discussed. The photos reveal a single crystal or polycrystal channel with a dome-shaped cap depending on the breakdown current. The implications of this structure for electric characteristics is analyzed with a spherical thermal-electric model. When ONO films are used as antifuse on FPGA product, the resistance of the antifuse can be controlled by choosing a sufficiently large programming current level and the resistance remains stable during 1000 h of burn-in at 125 degrees C and 5.75 V. Negligible change in delay time along many different data paths was observed.<>
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