质子辐照下AlGaN/GaN HEMTs动态on抗性降解

The 1st IEEE Workshop on Wide Bandgap Power Devices and Applications Pub Date : 2013-10-01 DOI:10.1109/WIPDA.2013.6695575

A. Koehler, T. Anderson, B. Weaver, M. Tadjer, K. Hobart, F. Kub

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引用次数: 15

摘要

Si衬底上sinx钝化的AlGaN/GaN高电子迁移率晶体管(HEMTs)对2 MeV质子照射具有很高的耐受性，照射剂量可达6 × 1014 cm-2。辐射引起的变化包括霍尔迁移率、二维电子气片载流子密度、片电阻、导通电阻、跨导、阈值电压和动态导通电阻。动态导通电阻的测量方法是在漏极电压高达20 V的情况下，从关断状态的静态点脉冲到导通状态。在高关断静态电压下测量的动态导通电阻比直流和霍尔参数对辐照更敏感，这使得动态导通电阻测量对表征辐射诱导降解非常有用。

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Degradation of dynamic ON-resistance of AlGaN/GaN HEMTs under proton irradiation

SiNx-passivated AlGaN/GaN high electron mobility transistors (HEMTs) on Si substrates demonstrated high tolerance to 2 MeV proton irradiation, up to a dose of 6 × 1014 cm-2. Radiation-induced changes were observed in Hall mobility, two-dimensional electron gas sheet carrier density, sheet resistance, ON-resistance, transconductance, threshold voltage, and dynamic ON-resistance. Dynamic ON-resistance was measured by pulsing to ON-state from OFF-state quiescent points with drain voltages up to 20 V. The dynamic ON-resistance measured from high OFF-state quiescent voltages was more sensitive to irradiation than the DC and Hall parameters, making the dynamic ON-resistance measurement useful in characterizing radiation-induced degradation.

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The 1st IEEE Workshop on Wide Bandgap Power Devices and Applications

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