{"title":"弱反转与强反转中谐波混频器注入锁定分频器的比较研究","authors":"Yushi Zhou, J. Mercier, F. Yuan","doi":"10.1109/MWSCAS.2018.8623850","DOIUrl":null,"url":null,"abstract":"This paper presents a comparative study of a divide-by-4 injection locked frequency divider with the injection transistor operating in both the weak and strong inversion regions. The relation between the maximum lock range of the frequency divider and the nonlinearity of the injection transistor is investigated. We show that the strong nonlinear characteristics of the injection transistor induce the wider lock range. We further investigate the existence of the optimum biasing point in the weak inversion region, which leads to the maximum lock range given the same injection power. The injection locked frequency divider designed in GF 130 nm 1.2 V CMOS technology, is validated using the simulation results.","PeriodicalId":365263,"journal":{"name":"2018 IEEE 61st International Midwest Symposium on Circuits and Systems (MWSCAS)","volume":"14 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":"{\"title\":\"A Comparative Study Of Injection Locked Frequency Divider Using Harmonic Mixer In Weak And Strong Inversion\",\"authors\":\"Yushi Zhou, J. Mercier, F. Yuan\",\"doi\":\"10.1109/MWSCAS.2018.8623850\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper presents a comparative study of a divide-by-4 injection locked frequency divider with the injection transistor operating in both the weak and strong inversion regions. The relation between the maximum lock range of the frequency divider and the nonlinearity of the injection transistor is investigated. We show that the strong nonlinear characteristics of the injection transistor induce the wider lock range. We further investigate the existence of the optimum biasing point in the weak inversion region, which leads to the maximum lock range given the same injection power. The injection locked frequency divider designed in GF 130 nm 1.2 V CMOS technology, is validated using the simulation results.\",\"PeriodicalId\":365263,\"journal\":{\"name\":\"2018 IEEE 61st International Midwest Symposium on Circuits and Systems (MWSCAS)\",\"volume\":\"14 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2018-08-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"4\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2018 IEEE 61st International Midwest Symposium on Circuits and Systems (MWSCAS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/MWSCAS.2018.8623850\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 IEEE 61st International Midwest Symposium on Circuits and Systems (MWSCAS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MWSCAS.2018.8623850","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 4
摘要
本文提出了一种比4注入锁定分频器与注入晶体管在弱反转区和强反转区工作的比较研究。研究了分频器的最大锁定范围与注入晶体管的非线性之间的关系。结果表明,注入晶体管的强非线性特性导致锁相范围变宽。我们进一步研究了弱反转区内最佳偏置点的存在性,使得在相同注入功率的情况下锁定范围最大。采用GF 130 nm 1.2 V CMOS技术设计的注入锁定分频器,并通过仿真结果进行了验证。
A Comparative Study Of Injection Locked Frequency Divider Using Harmonic Mixer In Weak And Strong Inversion
This paper presents a comparative study of a divide-by-4 injection locked frequency divider with the injection transistor operating in both the weak and strong inversion regions. The relation between the maximum lock range of the frequency divider and the nonlinearity of the injection transistor is investigated. We show that the strong nonlinear characteristics of the injection transistor induce the wider lock range. We further investigate the existence of the optimum biasing point in the weak inversion region, which leads to the maximum lock range given the same injection power. The injection locked frequency divider designed in GF 130 nm 1.2 V CMOS technology, is validated using the simulation results.