{"title":"基于宽带s参数测量的场效应管解析提取方法建模","authors":"G. Kompa, F. Lin","doi":"10.1109/EUMA.1990.336138","DOIUrl":null,"url":null,"abstract":"A fully analytical model parameter extraction with respect to microwave FET devices is under investigation using only \"hot\" scattering parameters over a wide frequency bandwidth. The stability of the proposed extraction algorithm is tested. Some preliminary extracted results from measured data are presented.","PeriodicalId":248044,"journal":{"name":"1990 20th European Microwave Conference","volume":"206 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1990-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"7","resultStr":"{\"title\":\"FET Modelling using an Analytic Extraction Method Based on Broadband S-Parameter Measurement\",\"authors\":\"G. Kompa, F. Lin\",\"doi\":\"10.1109/EUMA.1990.336138\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A fully analytical model parameter extraction with respect to microwave FET devices is under investigation using only \\\"hot\\\" scattering parameters over a wide frequency bandwidth. The stability of the proposed extraction algorithm is tested. Some preliminary extracted results from measured data are presented.\",\"PeriodicalId\":248044,\"journal\":{\"name\":\"1990 20th European Microwave Conference\",\"volume\":\"206 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1990-10-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"7\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1990 20th European Microwave Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/EUMA.1990.336138\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1990 20th European Microwave Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EUMA.1990.336138","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
FET Modelling using an Analytic Extraction Method Based on Broadband S-Parameter Measurement
A fully analytical model parameter extraction with respect to microwave FET devices is under investigation using only "hot" scattering parameters over a wide frequency bandwidth. The stability of the proposed extraction algorithm is tested. Some preliminary extracted results from measured data are presented.
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