Integrated Silicon P-I-N-Structures for Modulation in Terahertz Range

Modulators of terahertz (THz) range on the base of silicon integrated p-i-n-structures are investigated. The generalization of well-known Fletcher boundary conditions at the injecting electrodes has been put forward for the case of highly doped p++, n++ regions. The problem of double injection into i-region has been simulated in a two-dimensional case. The investigations of modulational properties of integrated p-i-n-structures in THz range have demonstrated a possibility to use these structures up to the frequencies ap6 THz