AP54RHC 30krad (Si)逻辑族辐射表征结果

2022 IEEE Radiation Effects Data Workshop (REDW) (in conjunction with 2022 NSREC) Pub Date : 2022-07-01 DOI:10.1109/REDW56037.2022.9921561

A. Ghoshal, A. Billings, M. Hamlyn, A. Quiroz, K. Schulmeyer

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引用次数: 0

摘要

本文详细介绍了Apogee Semiconductor的AP54RHC逻辑系列的总电离剂量(TID)、单事件闭锁(SEL)和单事件瞬态(SET)表征结果。给出了最大LE$\text{T}_{EFF}=74.7 \text{MeV}\cdot \text{cm}^{2}$/mg时，TID高达45krad (Si)和单事件效应(SEE)的结果。本文还介绍了使用95%置信区间的上限截面计算LEO和GEO空间应用的SEE事件率。这些结果表明，该器件系列非常适合于空间应用。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Radiation Characterization Results of AP54RHC 30 krad(Si) Logic Family

This paper details the Total Ionizing Dosage (TID), Single Event Latchup (SEL), and Single Event Transient (SET) characterization results for Apogee Semiconductor’s AP54RHC logic family. Results for TID up to 45krad (Si) and Single Event Effects (SEE) at a maximum LE$\text{T}_{EFF}=74.7 \text{MeV}\cdot \text{cm}^{2}$/mg are presented. The paper also presents SEE event rate calculations for LEO and GEO space applications using upper limit cross-sections with a 95% confidence interval. These results demonstrate that this device family is well suited for space applications.

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来源期刊

2022 IEEE Radiation Effects Data Workshop (REDW) (in conjunction with 2022 NSREC)

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