{"title":"一种独特的ku波段功率场效应管","authors":"H. Yamasaki, J. Schellenberg, Z. Lemnios","doi":"10.1109/IEDM.1980.189766","DOIUrl":null,"url":null,"abstract":"The Ku-band 3.6 mm power FET described in this paper was developed using a unique approach of combining six 0.6 mm cells at the chip level, The resultant device has delivered 2 watts of output power with 3,9 dB gain and 27.5% power added efficiency at 15 GHz, At 18 G.Hz, the output power o5 the same device is 1.25 watts with an associated gain o5 3.5 dB and 16,4% efficiency, This unique cell combining approach has offered significant flexibility in designing Ku-band and higher frequency FETs.","PeriodicalId":180541,"journal":{"name":"1980 International Electron Devices Meeting","volume":"70 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"7","resultStr":"{\"title\":\"A unique approach to Ku-band power FETs\",\"authors\":\"H. Yamasaki, J. Schellenberg, Z. Lemnios\",\"doi\":\"10.1109/IEDM.1980.189766\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The Ku-band 3.6 mm power FET described in this paper was developed using a unique approach of combining six 0.6 mm cells at the chip level, The resultant device has delivered 2 watts of output power with 3,9 dB gain and 27.5% power added efficiency at 15 GHz, At 18 G.Hz, the output power o5 the same device is 1.25 watts with an associated gain o5 3.5 dB and 16,4% efficiency, This unique cell combining approach has offered significant flexibility in designing Ku-band and higher frequency FETs.\",\"PeriodicalId\":180541,\"journal\":{\"name\":\"1980 International Electron Devices Meeting\",\"volume\":\"70 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1900-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"7\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1980 International Electron Devices Meeting\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IEDM.1980.189766\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1980 International Electron Devices Meeting","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.1980.189766","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
The Ku-band 3.6 mm power FET described in this paper was developed using a unique approach of combining six 0.6 mm cells at the chip level, The resultant device has delivered 2 watts of output power with 3,9 dB gain and 27.5% power added efficiency at 15 GHz, At 18 G.Hz, the output power o5 the same device is 1.25 watts with an associated gain o5 3.5 dB and 16,4% efficiency, This unique cell combining approach has offered significant flexibility in designing Ku-band and higher frequency FETs.
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