采用薄膜CMOS-SOI技术的横向双极晶体管，工作温度高达300/spl度/C的带隙电路

1999 IEEE International SOI Conference. Proceedings (Cat. No.99CH36345) Pub Date : 1999-10-04 DOI:10.1109/SOI.1999.819838

S. Adriaensen, V. Dessard, D. Flandre

{"title":"采用薄膜CMOS-SOI技术的横向双极晶体管，工作温度高达300/spl度/C的带隙电路","authors":"S. Adriaensen, V. Dessard, D. Flandre","doi":"10.1109/SOI.1999.819838","DOIUrl":null,"url":null,"abstract":"A voltage reference circuit with 3 V output has been designed and implemented in an SOI FD (fully-depleted) CMOS technology for very wide temperature range applications. The design uses lateral bipolar transistors and thin-film diffusion resistors. The circuit has been fabricated and tested over the full operating temperature range (25/spl deg/C-300/spl deg/C) and provides a temperature coefficient better than 100 ppm//spl deg/C.","PeriodicalId":117832,"journal":{"name":"1999 IEEE International SOI Conference. Proceedings (Cat. No.99CH36345)","volume":"28 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1999-10-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"21","resultStr":"{\"title\":\"A bandgap circuit operating up to 300/spl deg/C using lateral bipolar transistors in thin-film CMOS-SOI technology\",\"authors\":\"S. Adriaensen, V. Dessard, D. Flandre\",\"doi\":\"10.1109/SOI.1999.819838\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A voltage reference circuit with 3 V output has been designed and implemented in an SOI FD (fully-depleted) CMOS technology for very wide temperature range applications. The design uses lateral bipolar transistors and thin-film diffusion resistors. The circuit has been fabricated and tested over the full operating temperature range (25/spl deg/C-300/spl deg/C) and provides a temperature coefficient better than 100 ppm//spl deg/C.\",\"PeriodicalId\":117832,\"journal\":{\"name\":\"1999 IEEE International SOI Conference. Proceedings (Cat. No.99CH36345)\",\"volume\":\"28 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1999-10-04\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"21\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1999 IEEE International SOI Conference. Proceedings (Cat. No.99CH36345)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SOI.1999.819838\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1999 IEEE International SOI Conference. Proceedings (Cat. No.99CH36345)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SOI.1999.819838","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 21

摘要

在SOI FD(全耗尽)CMOS技术中设计并实现了一个具有3v输出的电压参考电路，用于非常宽的温度范围应用。本设计采用横向双极晶体管和薄膜扩散电阻。该电路已在整个工作温度范围(25/spl°C-300/spl°C)内制造和测试，并提供优于100 ppm//spl°C的温度系数。

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A bandgap circuit operating up to 300/spl deg/C using lateral bipolar transistors in thin-film CMOS-SOI technology

A voltage reference circuit with 3 V output has been designed and implemented in an SOI FD (fully-depleted) CMOS technology for very wide temperature range applications. The design uses lateral bipolar transistors and thin-film diffusion resistors. The circuit has been fabricated and tested over the full operating temperature range (25/spl deg/C-300/spl deg/C) and provides a temperature coefficient better than 100 ppm//spl deg/C.

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1999 IEEE International SOI Conference. Proceedings (Cat. No.99CH36345)

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